Synthesis and photoluminescence properties of continuous freestanding SiC(Al) films derived from aluminum-containing polycarbosilane

被引：9

作者：

Yao, R. Q.

Feng, Z. D. ^{[1
]}

Zhang, B. J.

Yu, Y. X.

Chen, L. F.

机构：

[1] Xiamen Univ, Dept Mat Sci & Engn, Coll Mat, Xiamen 361005, Peoples R China

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 24期

基金：

中国国家自然科学基金;

关键词：

Continuous freestanding SiC(Al) films; A-PCS; Microstructure; Photoluminescence;

D O I：

10.1016/j.tsf.2010.03.090

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Continuous freestanding SiC(Al) films were fabricated by melt spinning the aluminum-containing polycarbosilane (A-PCS) precursor. The results showed that the films contained beta-SiC crystals, alpha-SiC nano-crystals, C clusters and small amount of Al4O4C and Al4SiC4. The Al atoms in the films played important roles as both sintering aids and grain growth inhibitor. The PL spectrum showed a wide luminescence band from 320 nm to 440 nm, and the origin of PL centered at 385 nm might be related to the alpha-SiC nano-crystals using quantum size effects. The obtained films are expected to have important applications in MEMS for the environment of high temperature and optoelectronic devices. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：E165 / E168

页数：4