Low-frequency noise measurements of electrical stress in InAlN/GaN and AlGaN/GaN heterostructure field-effect transistors

被引：2

作者：

Kayis, Cemil ^{[1
]}

Zhu, C. Y. ^{[1
]}

Wu, Mo ^{[1
]}

Li, Xing ^{[1
]}

Ozgur, Umit ^{[1
]}

Morkoc, Hadis ^{[1
]}

机构：

[1] Virginia Commonwealth Univ, Dept Elect & Comp Engn, Med Coll Virginia Campus, Richmond, VA 23284 USA

来源：

GALLIUM NITRIDE MATERIALS AND DEVICES VI | 2011年 / 7939卷

关键词：

Low-frequency noise; GaN HFET; degradation; electrical stress; reliability; GATE LAG; TRAPS;

D O I：

10.1117/12.875723

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on the low-frequency noise (LFN) measurements on GaN based heterostructure field-effect transistors (HFETs) on sapphire with InAlN and AlGaN barriers to investigate the effects of electrical stress. The HFETs with InAlN barrier undergone a DC stress at bias conditions of V-DS=20V and V-G= -4.5 for up to 4 hours in aggregate. These devices exhibited an LFN in the form of 1/f(gamma) and a significant increase in the noise spectrum up to 15 dB for 2 hours and then the noise saturated for further stress durations. We also monitored the LFN for the HFETs with AlGaN barriers. The devices were stressed by applying 20V DC drain bias for up to 64 hours at various gate voltages. Stressing at a gate bias (V-G) of -2V showed negligible degradation. On the other hand, stressing at V-G=0V surprisingly reduced the noise power by about 4 to 15 dB in the frequency range of 1 Hz-100 kHz. Additionally, the InAlN-barrier HFETs exhibited 20-25 dB lower noise power than the ones with the AlGaN layer for the tested devices within the entire frequency range. The results suggest that the trap generation increases due to electrical stress in devices with InAlN barrier, whereas the noise power decreases as a function of stress in AlGaN/GaN HFETs due to an increase in the activation energy of the excess traps.

引用

页数：8

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