Scanning nuclear electric resonance microscopy using quantum-Hall-effect breakdown

We present a scanning nuclear-spin resonance (NSR) method that incorporates resistive detection with electric-field induced NSR locally excited by a scanning metallic probe. In the quantum-Hall effect breakdown regime, NSR intensity mapping at both the fundamental NSR frequency f(75As) and twice the frequency 2 f(75As) demonstrates the capability to probe the distribution of nuclear polarization, particularly in a semiconductor quantum well. We find that f(75As) NSR excitation drives not only local NSR but also spatially overlapped nonlocal NSR, which suppresses the maximum intensity of local NSR, while the 2 f(75As) NSR yields purely local excitation conferring a larger intensity. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).