Two-step growth of C60 films on H-terminated Si (111) substrate

被引：2
|
作者：
Takashima, H [1 ]
Nakaya, M [1 ]
Yamamoto, A [1 ]
Hashimoto, A [1 ]
机构：
[1] Fukui Univ, Dept Elect & Elect Engn, Fukui 9108507, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷
关键词：
nanostructure; two step growth; molecular beam epitaxy; C-60; film; fullerenes; semiconducting materials;
D O I：
10.1016/S0022-0248(01)00894-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Two-step growth technique has bi ell applied to van der Waals epitaxy of C-60 films on H-terminated vicinal Si (1 1 1) substrates to improve the film quality. Formations of the high nucleus density of the single domain with the face centered cubic (FCC) structure have been obtained at the initial stage of the two-step van der Waals epitaxy. The growth of the high-quality C-60 films with the single domain structure has been realized by the two-step growth technique in contrast to the films with the double domain structure obtained by the direct growth. The results strongly indicate that the two-step van der Waals epitaxy would have a great potential to obtain the single domain FCC C-60 films with the high quality under the optimized growth condition. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：825 / 828
页数：4
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