Critical IGBT design regarding EMI and switching losses

被引：0
|
作者：
Tsukuda, Masanori [1 ]
Omura, Ichiro [1 ]
Sakiyama, Yoko [1 ]
Yamaguchi, Masakazu [1 ]
Matsushita, Ken'ichi [1 ]
Ogura, Tsuneo [1 ]
机构：
[1] Toshiba Co Ltd, Semiconductor Co, Saiwai Ku, Kawasaki, Kanagawa 2128583, Japan
来源：
ISPSD 08: PROCEEDINGS OF THE 20TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Critical N-base layer design in IGBT is discussed regarding Electro-Magnetic Interference (EMI) and switching losses during turn-off. The newly proposed criteria for oscillation and avalanche induced loss were given by a simple equation model and the validity of the model has been confirmed with experimental results. This paper shows an efficient design method of N-base for EMI-free IGBT with considering the turnoff loss. In addition, EMI reduction structure with partly buried N layer in N-base was proposed for break through the design limit of N-base.
引用
收藏
页码：185 / 188
页数：4
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