Critical IGBT design regarding EMI and switching losses

被引：0

作者：

Tsukuda, Masanori ^{[1
]}

Omura, Ichiro ^{[1
]}

Sakiyama, Yoko ^{[1
]}

Yamaguchi, Masakazu ^{[1
]}

Matsushita, Ken'ichi ^{[1
]}

Ogura, Tsuneo ^{[1
]}

机构：

[1] Toshiba Co Ltd, Semiconductor Co, Saiwai Ku, Kawasaki, Kanagawa 2128583, Japan

来源：

ISPSD 08: PROCEEDINGS OF THE 20TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Critical N-base layer design in IGBT is discussed regarding Electro-Magnetic Interference (EMI) and switching losses during turn-off. The newly proposed criteria for oscillation and avalanche induced loss were given by a simple equation model and the validity of the model has been confirmed with experimental results. This paper shows an efficient design method of N-base for EMI-free IGBT with considering the turnoff loss. In addition, EMI reduction structure with partly buried N layer in N-base was proposed for break through the design limit of N-base.

引用

页码：185 / 188

页数：4

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