Effect of Window-Layer Materials on p-n Junction Location in Cu(In,Ga)Se2 Solar Cells

被引：8

作者：

Jiang, Chun-Sheng ^{[1
]}

Mansfield, Orelle M. ^{[1
]}

Glynn, Stephen ^{[1
]}

Xiao, Chuanxiao ^{[1
]}

Garris, Rebekah ^{[1
]}

Christensen, Steven ^{[1
]}

Al-Jassim, Mowafak ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2019年 / 9卷 / 01期

关键词：

Cu(ln; Ca)Se-2; (CIGS); electrical potential/field; Kelvin probe force microscopy (KPFM); pn junction location; thin-film solar cell; window layer; CBD-CDS; HOMOJUNCTION;

D O I：

10.1109/JPHOTOV.2018.2874039

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We report on measurements of junction location in Cu(In,Ga)Se-2 (CIGS) solar cells with different window-layer materials by nm-resolution electrical potential/field profiling across the junction using Kelvin probe force microscopy imaging on cross-section of the devices. The results illustrate that the device with a CdS window layer (CdS/CIGS) has a buried homojunction located inside the CIGS absorber with similar to 40-nm junction depth, whereas the ZnOS/CIGS devices with and without partial electrolyte treatment prior to the window-layer deposition are similar, exhibiting a heterointerface junction. This junction location may contribute in part to the highest efficiency of the CdS/CIGS device among the three devices.

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收藏

页码：308 / 312

页数：5

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