Incorporation of boron and nitrogen in carbon nanomaterials and its influence on their structure and opto-electronical properties

被引:17
作者
Arutyunyan, N. R. [2 ]
Arenal, R. [1 ,3 ]
Obraztsova, E. D. [2 ]
Stephan, O. [4 ]
Loiseau, A. [3 ]
Pozharov, A. S. [2 ]
Grebenyukov, V. V. [2 ]
机构
[1] U Zaragoza, INA, LMA, Zaragoza 50018, Spain
[2] AM Prokhorov Gen Phys Inst, Lab Nanomat Spect, Moscow 119991, Russia
[3] CNRS ONERA, LEM, F-92320 Chatillon, France
[4] CNRS U Paris Sud, LPS, F-91405 Orsay, France
关键词
SINGLE-WALLED NANOTUBES; NITRIDE;
D O I
10.1016/j.carbon.2011.09.035
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The presence of hexagonal boron nitride in the initial C:BN:Ni:Y2O3 mixture in the arc-discharge process leads to the modification of carbon nanostructures and to the creation of BxCyNz entities. BN-incorporation into these carbon nanostructures (single-wall nanotubes and carbon flakes) has been analyzed by high resolution transmission electron microscopy and electron energy loss spectroscopy. The optical absorption spectroscopy measurements have revealed a monotonous increase of the bandgap value of the synthesized nanotubes with the increase of the content of BN phase in the initial mixture of the synthesis compounds. Furthermore, a narrowing of the nanotube diameter distribution in favor of small diameters takes place in the presence of BN during the synthesis process. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码:791 / 799
页数:9
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