Negative magnetoresistance in SiC heteropolytype junctions

被引：2

作者：

Lebedev, Alexander Alexandrovich ^{[1
]}

Abramov, P. L. ^{[1
]}

Agrinskaya, N. V. ^{[1
]}

Kozub, V. I. ^{[1
]}

Kuznetsov, A. N. ^{[1
]}

Lebedev, S. P. ^{[1
]}

Oganesyan, G. A. ^{[1
]}

Sorokin, L. M. ^{[1
]}

Chernyaev, A. V. ^{[1
]}

Shamshur, D. V. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2008年 / 19卷 / 8-9期

关键词：

Epitaxial Layer; Twin Boundary; Epitaxial Film; Insulator Transition; Negative Magnetoresistance;

D O I：

10.1007/s10854-007-9417-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, we carried out for the first time a galvanomagnetic investigation of 3C-SiC/6H-SiC heterostructures at liquid-helium temperatures and observed in n-3C-SiC low resistance of the samples and the appearance of a negative magnetoresistance in weak fields (similar to 1 T). Analysis of the results we obtained shows that the low resistance is in all probability due to a metal-insulator transition in 3C-SiC epitaxial films. It was also found that the negative magnetoresistance magnitude decreases as the density of intertwine boundaries in a 3C-SiC epitaxial film becomes lower.

引用

页码：793 / 796

页数：4

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