Negative magnetoresistance in SiC heteropolytype junctions

被引：2

作者：

Lebedev, Alexander Alexandrovich ^{[1
]}

Abramov, P. L. ^{[1
]}

Agrinskaya, N. V. ^{[1
]}

Kozub, V. I. ^{[1
]}

Kuznetsov, A. N. ^{[1
]}

Lebedev, S. P. ^{[1
]}

Oganesyan, G. A. ^{[1
]}

Sorokin, L. M. ^{[1
]}

Chernyaev, A. V. ^{[1
]}

Shamshur, D. V. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2008年 / 19卷 / 8-9期

关键词：

Epitaxial Layer; Twin Boundary; Epitaxial Film; Insulator Transition; Negative Magnetoresistance;

D O I：

10.1007/s10854-007-9417-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, we carried out for the first time a galvanomagnetic investigation of 3C-SiC/6H-SiC heterostructures at liquid-helium temperatures and observed in n-3C-SiC low resistance of the samples and the appearance of a negative magnetoresistance in weak fields (similar to 1 T). Analysis of the results we obtained shows that the low resistance is in all probability due to a metal-insulator transition in 3C-SiC epitaxial films. It was also found that the negative magnetoresistance magnitude decreases as the density of intertwine boundaries in a 3C-SiC epitaxial film becomes lower.

引用

页码：793 / 796

页数：4

共 17 条

[1] Magnetoresistance of two-dimensional p-GaAs/Al10.3Ga10.7As structures in the vicinity of metal-insulator transition:: Effect of superconducting leads -: art. no. 085337 [J].

Agrinskaya, NV ;

Kozub, VI ;

Chernyaev, AV ;

Shamshur, DV ;

Zuzin, AA .

PHYSICAL REVIEW B, 2005, 72 (08)

[2]

ALEKSEEV YA, 1987, FRANK KAMENETSKII KR, V32, P1060

[3] Photothermal ionization spectroscopy of shallow nitrogen donor states in 4H-SiC [J].

Chen, CQ ;

Zeman, J ;

Engelbrecht, F ;

Peppermüller, C ;

Helbig, R ;

Chen, ZH ;

Martinez, G .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (08) :3800-3805

[4] LOCATION AND SHAPE OF CONDUCTION-BAND MINIMA IN CUBIC SILICON-CARBIDE [J].

DEAN, PJ ;

CHOYKE, WJ ;

PATRICK, L .

JOURNAL OF LUMINESCENCE, 1977, 15 (03) :299-314

[5]

GANTMAKHER VF, 2003, ELECTR DISOREDERED S

[6]

Goldberg Yu., 2001, Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe

[7]

Henisch H.K., 1969, SILICON CARBIDE 1968

[8]

Iwata H, 2002, MATER SCI FORUM, V433-4, P527, DOI 10.4028/www.scientific.net/MSF.433-436.527

[9] DONOR-ACCEPTOR PAIR EMISSION FROM BETA-SIC DOPED WITH GALLIUM [J].

KUWABARA, H ;

YAMANAKA, K ;

YAMADA, S .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 37 (02) :K157-K161

[10] A study of thick 3C-SiC epitaxial layers grown on 6H-SIC substrates by sublimation epitaxy in vacuum [J].

Lebedev, A. A. ;

Zelenin, V. V. ;

Abramov, P. L. ;

Bogdanova, E. V. ;

Lebedev, S. P. ;

Nel'son, D. K. ;

Razbirin, B. S. ;

Shcheglov, M. P. ;

Tregubova, A. S. ;

Suvajarvi, M. ;

Yakimova, R. .

SEMICONDUCTORS, 2007, 41 (03) :263-265

← 1 2 →