Synthesis and annealing process of ultra-large SnS nanosheets for FTO/SnS/CdS/Pt photocathode

被引：9
作者：
Wu, Chuangsheng [1 ]
Yao, Kefeng [1 ]
Guan, Yongsheng [1 ]
Ali, Omar Abdulsada [2 ]
Gao, Meng [1 ]
Huang, Jian [1 ]
Lai, Jianming [1 ]
Shi, Wangzhou [3 ]
Hu, Gujin [3 ]
Wang, Linjun [1 ]
Shen, Yue [1 ]
机构：
[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai, Peoples R China
[2] Univ Baghdad, Dept Phys, Baghdad, Iraq
[3] Shanghai Normal Univ, Coll Math & Sci, Dept Phys, Shanghai, Peoples R China
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2019年 / 93卷
关键词：
SnS nanosheets; Photoelectrochemical properties; Water splitting; CHEMICAL BATH DEPOSITION; ATOMIC LAYER DEPOSITION; THIN-FILMS; OPTICAL-PROPERTIES; FABRICATION; HETEROJUNCTION; NANOPARTICLES;
D O I：
10.1016/j.mssp.2019.01.008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SnS has been widely used in photoelectric devices due to its special band gap of 1.2-1.5 eV. Here, we reported on the fabrication of SnS nanosheets and the effect of synthesis condition together with heat treatment on its physical properties. The obtained band gap of the SnS nanosheets is in the rage of 1.37-1.41 eV. It was found that the photo-current density of a thin film comprised of SnS nanosheets could be enhanced significantly by annealing treatment. The maximum photo-current density of the stack structure of FTO/SnS/CdS/Pt was high as 389.5 mu A cm(-2), rendering its potential application in high efficiency solar hydrogen production.
引用
收藏
页码：208 / 214
页数：7
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