The influence of the stacked and double material gate structures on the short channel effects in SOI MOSFETS

被引：5

作者：

Fathi, E ^{[1
]}

Behnam, A ^{[1
]}

Hashemi, P ^{[1
]}

Esfandyarpour, B ^{[1
]}

Fathipour, M ^{[1
]}

机构：

[1] Univ Tehran, ECE Dept, Device Modeling & Simulat Lab, Tehran, Iran

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2005年 / E88C卷 / 06期

关键词：

MOSFET dual metal gate; stacked gate; DIBL; short channel effects;

D O I：

10.1093/ietele/e88-c.6.1122

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An asymmetric Dual Metal Stack Gate (DMSG) SOI MOSFET transistor has been investigated for its enhanced electrical characteristics. A 2-D physical model has been proposed and its results have been confirmed by those obtained by simulation. These results predict better short channel effects such as drain induced barrier lowering (DIBL) characteristics and hot carrier effects for this device compared to those for conventional SOI MOSFETs. The effects of the Stacked Gate (SG) and Dual Metal Gate (DMG) structures on short channel effects are compared. It has been observed that SG reduces DIBL significantly, while DMG prevents the normal roll-off of the threshold voltage reduction.

引用

页码：1122 / 1126

页数：5

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