Low dielectric loss, colossal permittivity, and high breakdown electric field in Al-doped Y2/3Cu3Ti4O12 ceramics

被引:10
作者
Peng, Zhanhui [1 ]
Wang, Xing [1 ]
Zhang, Fudong [1 ]
Xu, Shudong [1 ]
Wang, Juanjuan [2 ]
Wu, Di [1 ]
Liang, Pengfei [3 ]
Wei, Lingling [4 ]
Chao, Xiaolian [1 ]
Yang, Zupei [1 ]
机构
[1] Shaanxi Normal Univ, Sch Mat Sci & Engn, Key Lab Macromol Sci Shaanxi Prov, Shaanxi Key Lab Adv Energy Devices, Xian 710062, Shaanxi, Peoples R China
[2] Xian Univ Technol, Sch Mat Sci & Engn, Xian 710048, Peoples R China
[3] Shaanxi Normal Univ, Sch Phys & Informat Technol, Xian 710062, Shaanxi, Peoples R China
[4] Shaanxi Normal Univ, Sch Chem & Chem Engn, Xian 710062, Shaanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
Low loss; Colossal permittivity; Breakdown field strength; Grain boundary resistance; ENERGY-STORAGE DENSITY; SOL-GEL; CACU3TI4O12; CERAMICS; STABILITY; RESPONSES; CONSTANT; SYSTEM;
D O I
10.1016/j.ceramint.2022.04.177
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The miniaturization and high capacitance of electronic components are driving the development of highperformance electronic ceramic materials. In this work, we design a new strategy to achieve satisfactory dielectric properties with low loss, colossal permittivity, and a high breakdown electric field (Eb) in Al-doped Y2/ 3Cu3Ti4O12 (YCTO) ceramics prepared by a solid-phase synthesis method. The dielectric loss decreased with Al doping in the YCTO. The dielectric constant and the Eb were improved upon Al doping. With Al doping levels of 0.03 and 0.05, Y2/3Al0.03Cu2.97Ti4O12 and Y2/3Al0.05Cu2.95Ti4O12 ceramics displayed, respectively, a suppressed loss tangent of about 0.028 and 0.031, a high dielectric constant of approximately 9540 and 11792, and an Eb of approximately 4.32 and 4.54 kV/cm. The improved dielectric properties of the produced ceramics were closely linked to enhanced grain boundaries resistance. This study explores the physical mechanism behind the high performance of the YCTO-based ceramics, and also provides theoretical support for the application of devices comprising YCTO and related materials.
引用
收藏
页码:21906 / 21912
页数:7
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