Low-threshold multiple-wavelength vertical-cavity laser arrays obtained by postgrowth wet oxidation

被引：7

作者：

Fiore, A ^{[1
]}

Akulova, YA ^{[1
]}

Ko, J ^{[1
]}

Hegblom, ER ^{[1
]}

Coldren, LA ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, ECE Dept, Santa Barbara, CA 93106 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 19期

关键词：

D O I：

10.1049/el:19981193

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A mask-defined array of multiple-wavelength vertical-cavity surface-emitting lasers with submilliamp threshold currents over a 22nm wavelength span has been fabricated with a single epitaxial growth on a conventional substrate. Tuning is achieved by using the combination of lateral and vertical wet oxidation of an AlGaAs layer inside the cavity.

引用

页码：1857 / 1858

页数：2

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