Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors

被引：12

作者：

Cui, Peng ^{[1
]}

Lv, Yuanjie ^{[2
]}

Liu, Huan ^{[3
]}

Cheng, Aijie ^{[3
]}

Luan, Chongbiao ^{[4
]}

Zhou, Yang ^{[5
]}

Lin, Zhaojun ^{[1
]}

机构：

[1] Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China

[2] Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Hebei, Peoples R China

[3] Shandong Univ, Sch Math, Jinan 250100, Peoples R China

[4] China Acad Engn Phys, Inst Fluid Phys, Key Lab Pulsed Power, Mianyang 621999, Sichuan, Peoples R China

[5] China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610200, Peoples R China

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2020年 / 119卷 / 119期

基金：

中国国家自然科学基金;

关键词：

AlGaN/GaN HEMT; Source parasitic resistance; Two-dimensional scattering theory; Device linearity; ENVELOPE-TRACKING; HIGH-EFFICIENCY; ACCESS RESISTANCE; POWER-AMPLIFIER;

D O I：

10.1016/j.physe.2020.114027

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This work presents the first experimental observation of the improved device linearity by increasing gate lengths in AlGaN/GaN high electron mobility transistors (HEMTs). Based on measured power gain and the two-dimensional scattering theory, it is determined that increasing gate length can decrease the source parasitic resistance variation, then improve device linearity. This could present a feasible method toward improving the device linearity of AlGaN/GaN HEMTs in device level.

引用

页数：5

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