Preparation of Cu(In,Ga)Se2 thin films by pulse electrodeposition

被引：31

作者：

Liu, Fangyang ^{[1
]}

Huang, Chun ^{[1
]}

Lai, Yanqing ^{[1
]}

Zhang, Zhian ^{[1
]}

Li, Jie ^{[1
]}

Liu, Yexiang ^{[1
]}

机构：

[1] Cent S Univ, Sch Met Sci & Engn, Changsha 410083, Hunan, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2011年 / 509卷 / 08期

关键词：

Cu(In; Ga)Se-2; Thin films; Pulse electrodeposition; Duty cycle; Nucleation and growth; CUINSE2; GROWTH; ELECTROCRYSTALLIZATION; DEPOSITION;

D O I：

10.1016/j.jallcom.2010.12.031

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Cu(In,Ga)Se-2 thin films were prepared from aqueous solution by pulse electrodeposition. It was found that the co-deposition of the species occurred under a 3D growth with instantaneous nucleation. The morphology of the pulse-electrodeposited film can be improved by adjusting the duty cycle. The significant loss of indium and reduction of In-Se compound(s) accordingly were observed with decrease of duty cycle. Chalcopyrite structure Cu(In,Ga)Se-2 films with p-type behavior and enhancement in crystallinity were obtained after annealing treatment in Ar atmosphere. (c) 2010 Elsevier B.V. All rights reserved.

引用

页码：L129 / L133

页数：5

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