A nonlinear model for frequency dispersion and DC intrinsic parameter extraction for GaN-based HEMT

被引：2

作者：

Tung The-Lam Nguyen ^{[1
]}

Kim, Sam-Dong ^{[1
]}

机构：

[1] Dongguk Univ, Div Elect & Elect Engn, 3-Ga 26 Pildong, Seoul 100715, South Korea

来源：

SOLID-STATE ELECTRONICS | 2017年 / 137卷

基金：

新加坡国家研究基金会;

关键词：

SMALL-SIGNAL; TRANSCONDUCTANCE DISPERSION; FET MODEL; TRANSISTORS;

D O I：

10.1016/j.sse.2017.09.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose in this study a practical nonlinear model for the AlGaN/GaN high electron mobility transistors (HEMTs) to extract DC intrinsic transconductance (gmDC), output conductance (gdsDC), and electron mobility from the intrinsic parameter set measured at high frequencies. An excellent agreement in I-V characteristics of the model with a fitting error of 0.11% enables us successfully extract the gmDC, gdsDC, and the total transconductance dispersion. For this model, we also present a reliable analysis scheme wherein the frequency dispersion effect due regional surface states in AlGaN/GaN HEMTs is taken into account under various bias conditions. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：109 / 116

页数：8

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