Inhibiting the Kink Effect and Hot-Carrier Stress Degradation Using Dual-Gate Low-Temperature Poly-Si TFTs

被引:12
作者
Chen, Hong-Chih [1 ]
Huang, Shin-Ping [2 ]
Tu, Yu-Fa [3 ]
Kuo, Chuan-Wei [4 ]
Zhou, Kuan-Ju [5 ]
Chen, Jian-Jie [5 ]
Shih, Yu-Shan [5 ]
Chen, Guan-Fu [5 ]
Su, Wan-Ching [6 ]
Tu, Hong-Yi [6 ]
Huang, Hui-Chun [6 ]
Lai, Wei-Chih [1 ]
Chang, Ting-Chang [5 ]
机构
[1] Natl Cheng Kung Univ, Dept Photon, Tainan 70101, Taiwan
[2] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 80424, Taiwan
[3] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan
[4] Natl Sun Yat Sen Univ, Dept Chem, Kaohsiung 80424, Taiwan
[5] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan
[6] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 80424, Taiwan
关键词
Kink effect; hot-carrier stress (HCS); floating body effect; impact ionization; POLYCRYSTALLINE-SILICON; HIGH-RESOLUTION; LTPS-TFT; FILM; PERFORMANCE; PBTI; NBTI;
D O I
10.1109/LED.2019.2951935
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study examines the appearance of a kink effect phenomenon in the I (D)-V (D) electrical characteristics of low-temperature polycrystalline Si thin-film transistors (LTPS TFTs) after high-current-induced hot-carrier stress (HCS). During HCS, electron-hole pairs were generated in the channel near the drain terminal owing to impact ionization. Next, the electrons were repelled to war the source by the drain electric field, thereby inducing the floating body effect, which lowered the source barrier. In addition, a dual-gate-structured LTPS was found to inhibit the electrical degradation caused by HCS. The COMSOL simulation indicated that in the dual-gate structure, holes at the upper and lower margins of the channel were inverted and inhibited the degradation caused by the floating body effect. Therefore, the use of dual-gate LTPS TFTs could facilitate high-current gate-on-array circuit applications in display panels.
引用
收藏
页码:54 / 57
页数:4
相关论文
共 25 条
[1]  
[Anonymous], 2014, ATL US MAN
[2]   Analysis of drain field and hot carrier stability of poly-Si thin film transistors [J].
Ayres, JR ;
Brotherton, SD ;
McCulloch, DJ ;
Trainor, MJ .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (4A) :1801-1808
[3]   Electrical Properties and Stability of Dual-Gate Coplanar Homojunction DC Sputtered Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors and Its Application to AM-OLEDs [J].
Baek, Gwanghyeon ;
Abe, Katsumi ;
Kuo, Alex ;
Kumomi, Hideya ;
Kanicki, Jerzy .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (12) :4344-4353
[4]   Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low Temperature Poly-Si Thin-Film Transistors [J].
Chen, Bo-Wei ;
Chang, Ting-Chang ;
Chang, Kuan-Chang ;
Hung, Yu-Ju ;
Huang, Shin-Pin ;
Chen, Hua-Mao ;
Liao, Po-Yung ;
Lin, Yu-Ho ;
Huang, Hui-Chun ;
Chiang, Hsiao-Cheng ;
Yang, Chung-I ;
Zheng, Yu-Zhe ;
Chu, Ann-Kuo ;
Li, Hung-Wei ;
Tsai, Chih-Hung ;
Lu, Hsueh-Hsing ;
Wang, Terry Tai-Jui ;
Chang, Tsu-Chiang .
ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (13) :11942-11949
[5]   Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors [J].
Chen, Hong-Chih ;
Chang, Ting-Chang ;
Lai, Wei-Chih ;
Chen, Guan-Fu ;
Chen, Bo-Wei ;
Hung, Yu-Ju ;
Chang, Kuo-Jui ;
Cheng, Kai-Chung ;
Huang, Chen-Shuo ;
Chen, Kuo-Kuang ;
Lu, Hsueh-Hsing ;
Lin, Yu-Hsin .
ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (31) :25866-25870
[6]   Double-Gate Two-Step Source/Drain Poly-Si Thin-Film Transistor [J].
Chien, Feng-Tso ;
Hung, Chih-Ping ;
Chiu, Hsien-Chin ;
Kang, Tsung-Kuei ;
Cheng, Ching-Hwa ;
Tsai, Yao-Tsung .
COATINGS, 2019, 9 (04)
[7]   REDUCTION OF KINK EFFECT IN THIN-FILM SOI MOSFETS [J].
COLINGE, JP .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) :97-99
[8]   Anomalous turn-on voltage degradation during hot-carrier stress in polycrystalline silicon thin-film transistors [J].
Farmakis, FV ;
Brini, J ;
Kamarinos, G ;
Dimitriadis, CA .
IEEE ELECTRON DEVICE LETTERS, 2001, 22 (02) :74-76
[9]   30 μm- Pitch Oxide TFT-Based Gate Driver Design for Small-Size, High-Resolution, and Narrow-Bezel Displays [J].
Geng, Di ;
Chen, Yuan Feng ;
Mativenga, Mallory ;
Jang, Jin .
IEEE ELECTRON DEVICE LETTERS, 2015, 36 (08) :805-807
[10]   ANALYSIS OF THE KINK EFFECT IN MOS-TRANSISTORS [J].
HAFEZ, IM ;
GHIBAUDO, G ;
BALESTRA, F .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) :818-821