Tailoring the morphological structure of BiVO4 photocatalyst for enhanced photoelectrochemical solar hydrogen production from natural lake water

被引:55
作者
Samsudin, Mohamad Fakhrul Ridhwan [1 ]
Bashiri, Robabeh [2 ]
Mohamed, Norani Muti [2 ]
Ng, Yun Hau [3 ]
Sufian, Suriati [1 ,2 ]
机构
[1] Univ Teknol PETRONAS, Chem Engn Dept, Bandar Seri Iskandar 32610, Perak, Malaysia
[2] Univ Teknol PETRONAS, Ctr Innovat Nanostruct & Nanodevices COINN, Bandar Seri Iskandar 32610, Perak, Malaysia
[3] City Univ Hong Kong, Sch Energy & Environm, Kowloon, Hong Kong, Peoples R China
关键词
BiVO4; Solar energy materials; Photoelectrochemical cell; Thin films; Hydrogen; Lake water; WASTE-WATER; HIERARCHICAL STRUCTURES; H-2; EVOLUTION; DEGRADATION; EFFICIENT; PERFORMANCE; PH; HETEROJUNCTION; PHOTOANODE; TIO2;
D O I
10.1016/j.apsusc.2019.144417
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Solar hydrogen production via natural lake water was investigated via monoclinic bismuth vanadate (BiVO4) photocatalyst in a tandem photoelectrochemical cell (PEC), which was made up via integrating a PEC system with a dye-sensitized solar cell (DSSCs) in a series. Herein, the visible-light-driven BiVO4 photocatalysts were synthesized via a simple hydrothermal treatment reaction. A mathematical representation for optimizing the synthesizing condition of BiVO4, namely pH and the hydrothermal temperature was successfully generated via response surface methodology (RSM). The BiVO4 sample prepared at pH = 1.96 and hydrothermal treatment at 120 degrees C (Run 4) exhibited remarkable photocatalytic hydrogen performance of 9.52 mmol/h within 7 h. In addition, the observed photocurrent density and photoconversion efficiency were 5.66 mA/cm(2) at 0.7 V and 0.056%, respectively. The profound performance observed was attributed to the low photocharge carrier resistance and a more negative flat band potential for PEC water splitting system. This work demonstrates the feasibility of producing hydrogen from abundant natural lake water via BiVO4 photocatalyst.
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页数:11
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