Effects of CuO-V2O5-Bi2O3 additions on the microstructure and microwave dielectric properties of 0.42ZnNb2O6-0-58TiO2 ceramics

被引：0

作者：

Wang, J ^{[1
]}

Yue, ZX ^{[1
]}

Zhang, YC ^{[1
]}

Gui, ZL ^{[1
]}

Li, LT ^{[1
]}

机构：

[1] Tsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China

来源：

HIGH-PERFORMANCE CERAMICS III, PTS 1 AND 2 | 2005年 / 280-283卷

关键词：

ZnNb2O6; ceramics; microstructure; microwave dielectric properties;

D O I：

10.4028/www.scientific.net/KEM.280-283.27

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effects of additions on the microstructure and microwave dielectric properties of 0.42ZnNb(2)O(6)-0.58TiO(2) (ZNT) ceramics were investigated systematically. The sintering temperature of ZNT ceramics doped with different amounts of CuO, Bi2O3 and V2O5 can be effectively reduced. The phase of doped samples was studied compared to the undoped ZNT ceramics. For densified ZNT ceramics with the increasing amount of dopant CuO-Bi2O3-V2O5, the dielectric constants (epsilon(r)) of densified samples ranges from 38 to 42, the Q(.)f values decrease evidently and ranges from 13300 GHz to 5000 GHz and the tau(f) values are shifted toward negative.

引用

页码：27 / 30

页数：4

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