Interfacial microstructure characterization and strength evaluation of Si3N4/Si3N4 joints with Si-Mg composite filler for high-temperature applications

被引:5
作者
Kohama, Kazuyuki [1 ]
机构
[1] Kyoto Municipal Inst Ind Technol & Culture, Shimogyo Ku, Bldg 9 South,Kyoto Res Pk,91 Chudoji Awata Cho, Kyoto 6008815, Japan
关键词
Joining; Phase diagram; Evaporation; Isothermal solidification; Electron microscopy; RICE-HUSK ASH; SILICON-NITRIDE; MECHANICAL-PROPERTIES; OXIDATION; CARBIDE; SI3N4; MGSIN2; CRYSTALLINE; CERAMICS; PHASE;
D O I
10.1016/j.ceramint.2021.04.252
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Silicon-nitride (Si3N4) components were joined under vacuum at 1100 degrees C for 10 min using Si-Mg composite fillers with Mg contents (XMg) that ranged from 0 at.% to 59 at.%. The Si3N4/Si3N4 joints were fabricated via Si layer formation at the joint interface; the molten Si-Mg liquid was transformed into a solid Si layer after Mgevaporation-induced isothermal solidification. The joint tensile strength at room temperature increased considerably when XMg exceeded the liquidus composition of 37 at.% because of the enhanced densification/ thinning of the Si layer. In these cases, some Mg atoms reacted with Si3N4 to form a fine-grained MgSiN2-based layer, whereas relatively large ( 0.1 mu m) and smaller MgO precipitates (<10 nm) were observed in the Si layer. At a high XMg, the MgO precipitates were arranged in a network-like structure, which improved the fracture strength of the Si layer. The joints with a high strength at room temperature were examined using a three-point bending test at 1200 degrees C in air and endured a maximum fracture stress of -200 MPa, which confirmed their potential for use in oxidizing atmospheres at least 100 degrees C above the bonding temperature.
引用
收藏
页码:22424 / 22434
页数:11
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