An analysis of flexoelectric coupling associated electroelastic fields in functionally graded semiconductor nanobeams

被引:19
作者
Chu, Liangliang [1 ,2 ]
Dui, Guansuo [3 ]
Mei, Hai [1 ,2 ]
Liu, Lisheng [1 ,2 ]
Li, Yanbin [4 ]
机构
[1] Wuhan Univ Technol, Hubei Key Lab Theory & Applicat Adv Mat Mech, Wuhan 430070, Peoples R China
[2] Wuhan Univ Technol, Dept Mech & Engn Struct, Wuhan 430070, Peoples R China
[3] Beijing Jiaotong Univ, Inst Mech, Beijing 100044, Peoples R China
[4] North Carolina State Univ, Dept Mech & Aerosp Engn, Raleigh, NC 27695 USA
基金
中国国家自然科学基金;
关键词
PIEZOELECTRIC SEMICONDUCTOR; NANOGENERATORS; PIEZOTRONICS;
D O I
10.1063/5.0057702
中图分类号
O59 [应用物理学];
学科分类号
摘要
Strain gradient with strong size dependency and structural association (geometry or microstructure) can efficiently tune the performances of semiconductors by the flexoelectric coupling effect. In this work, we studied a novel asymmetric beam-like semiconductor made by functionally graded (FG) flexoelectric materials. When being applied with pure bending loads at two ends, it can generate a relatively large inhomogeneous strain field to achieve obvious semiconducting behaviors. Unlike the analysis for piezoelectric semiconductor materials, we considered the effects of flexoelectricity and strain gradient elasticity in constitutive equations for flexoelectric semiconductor materials. Then, the complicated mutual coupling governing equations and associated boundary conditions are rederived strictly. By the Fourier series expansion and spatial integration methods, we obtained the solutions of the set of partial differential equations with non-constant coefficients. Results show that the semiconducting electromechanical coupling performances of the beam-like FG flexoelectric semiconductor depend heavily on the ratio and structural distributions of its constituent. Moreover, it is found that the inner carrier distributions and electromechanical characteristics can be significantly tuned by the strain gradient elasticity, the flexoelectricity, and the structural size. We believe this work provides a useful guideline for the practical design and manufacture of novel electromechanical semiconductor devices.
引用
收藏
页数:16
相关论文
共 64 条
[1]   Quantum spin hall effect [J].
Bernevig, BA ;
Zhang, SC .
PHYSICAL REVIEW LETTERS, 2006, 96 (10)
[2]  
Cao J, 2009, NAT NANOTECHNOL, V4, P732, DOI [10.1038/NNANO.2009.266, 10.1038/nnano.2009.266]
[3]   Piezotronic effects in the extension of a composite fiber of piezoelectric dielectrics and nonpiezoelectric semiconductors [J].
Cheng, Ruoran ;
Zhang, Chunli ;
Chen, Weiqiu ;
Yang, Jiashi .
JOURNAL OF APPLIED PHYSICS, 2018, 124 (06)
[4]   Size-dependent electromechanical coupling in functionally graded flexoelectric nanocylinders [J].
Chu, Liangliang ;
Li, Yanbin ;
Dui, Guansuo .
ACTA MECHANICA, 2019, 230 (09) :3071-3086
[5]   Flexoelectric effect on the bending and vibration responses of functionally graded piezoelectric nanobeams based on general modified strain gradient theory [J].
Chu, Liangliang ;
Dui, Guansuo ;
Ju, Chengjian .
COMPOSITE STRUCTURES, 2018, 186 :39-49
[6]  
de Lorenzi H. G., 1975, Journal of Mathematical Physics, V16, P938, DOI 10.1063/1.522600
[7]   The impact of flexoelectricity on materials, devices, and physics [J].
Deng, Qian ;
Lv, Sihao ;
Li, Zhaoqi ;
Tan, Kai ;
Liang, Xu ;
Shen, Shengping .
JOURNAL OF APPLIED PHYSICS, 2020, 128 (08)
[8]   Size-Dependent Flexoelectric Response of a Truncated Cone and the Consequent Ramifications for the Experimental Measurement of Flexoelectric Properties [J].
Deng, Qian .
JOURNAL OF APPLIED MECHANICS-TRANSACTIONS OF THE ASME, 2017, 84 (10)
[9]   Electrets in soft materials: Nonlinearity, size effects, and giant electromechanical coupling [J].
Deng, Qian ;
Liu, Liping ;
Sharma, Pradeep .
PHYSICAL REVIEW E, 2014, 90 (01)
[10]   Nanoscale flexoelectric energy harvesting [J].
Deng, Qian ;
Kammoun, Mejdi ;
Erturk, Alper ;
Sharma, Pradeep .
INTERNATIONAL JOURNAL OF SOLIDS AND STRUCTURES, 2014, 51 (18) :3218-3225