The quantum mobility of a two-dimensional electron gas in selectively doped GaAs/InGaAs quantum wells with embedded quantum dots

被引：12

作者：

Pagnossin, IR

da Silva, ECF

Quivy, AA

Martini, S

Sergio, CS

机构：

[1] Univ Sao Paulo, Inst Fis, LNMS, BR-05315970 Sao Paulo, Brazil

[2] Univ Sao Judas Tadeu, Fac Tecnol & Ciencias Exatas, BR-03166000 Sao Paulo, Brazil

[3] Univ Fed Amazonas, Inst Ciencias Exatas, Dept Fis, BR-69077000 Manaus, Amazonas, Brazil

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 11期

关键词：

D O I：

10.1063/1.1925329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work we studied the transport properties of a two-dimensional electron gas (2DEG) in a series of GaAs/InGaAs delta-modulation-doped quantum wells, in which an InAs layer was located in the vicinity of the electron channel. We observed that, even after illumination, all samples exhibited a total free-electron concentration slightly lower than the one measured in a reference sample (without the InAs layer), an effect that was attributed to the transfer of carriers from the 2DEG to the surface states. Our data also provided evidence that strain fields in and around the quantum dots act as additional scattering sources for the 2DEG. (C) 2005 American Institute of Physics.

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页数：6

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