Strain controlled growth of crack-free GaN with low defect density on silicon (111) substrate

被引：16

作者：

Drechsel, P. ^{[1
]}

Riechert, H. ^{[1
]}

机构：

[1] Paul Drude Inst Solid State Elect, D-10117 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 315卷 / 01期

关键词：

Doping; X-ray diffraction; Metal-organic vapor phase epitaxy; Nitrides; ALGAN/ALN INTERMEDIATE LAYER; TEMPERATURE ALN INTERLAYERS; VAPOR-PHASE EPITAXY; SI SUBSTRATE; STRESS; SI(111); REDUCTION; THICKNESS;

D O I：

10.1016/j.jcrysgro.2010.09.024

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We demonstrate the growth of 4.5 mu m thick gallium nitride on 100 mm diameter silicon (1 1 1) substrate using metal-organic chemical vapor deposition. For strain engineering an aluminum nitride buffer and several interlayers were applied. The realized gallium nitride layer-stack is crack-free. Several characterization methods were applied to study the crystalline quality. In X-ray diffraction measurements the full width at half maximum of the (0 0 2) reflection was found to be as low as 400 '', whereas the (2 0 1) reflection showed a full width at half maximum of 580 ''. For verification transmission electron microscopy examinations were performed to determine the structural quality. A comparison to gallium nitride, grown on sapphire, is made. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：211 / 215

页数：5

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