Strain controlled growth of crack-free GaN with low defect density on silicon (111) substrate

被引：16

作者：

Drechsel, P. ^{[1
]}

Riechert, H. ^{[1
]}

机构：

[1] Paul Drude Inst Solid State Elect, D-10117 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 315卷 / 01期

关键词：

Doping; X-ray diffraction; Metal-organic vapor phase epitaxy; Nitrides; ALGAN/ALN INTERMEDIATE LAYER; TEMPERATURE ALN INTERLAYERS; VAPOR-PHASE EPITAXY; SI SUBSTRATE; STRESS; SI(111); REDUCTION; THICKNESS;

D O I：

10.1016/j.jcrysgro.2010.09.024

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We demonstrate the growth of 4.5 mu m thick gallium nitride on 100 mm diameter silicon (1 1 1) substrate using metal-organic chemical vapor deposition. For strain engineering an aluminum nitride buffer and several interlayers were applied. The realized gallium nitride layer-stack is crack-free. Several characterization methods were applied to study the crystalline quality. In X-ray diffraction measurements the full width at half maximum of the (0 0 2) reflection was found to be as low as 400 '', whereas the (2 0 1) reflection showed a full width at half maximum of 580 ''. For verification transmission electron microscopy examinations were performed to determine the structural quality. A comparison to gallium nitride, grown on sapphire, is made. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：211 / 215

页数：5

共 21 条

[1] Stress and defect control in GaN using low temperature interlayers [J].

Amano, H ;

Iwaya, M ;

Kashima, T ;

Katsuragawa, M ;

Akasaki, I ;

Han, J ;

Hearne, S ;

Floro, JA ;

Chason, E ;

Figiel, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1998, 37 (12B) :L1540-L1542

[2] The origin of stress reduction by low-temperature AlN interlayers [J].

Bläsing, J ;

Reiher, A ;

Dadgar, A ;

Diez, A ;

Krost, A .

APPLIED PHYSICS LETTERS, 2002, 81 (15) :2722-2724

[3] Metalorganic chemical vapor phase epitaxy of crack-free GaN on Si (111) exceeding 1 μm in thickness [J].

Dadgar, A ;

Bläsing, J ;

Diez, A ;

Alam, A ;

Heuken, M ;

Krost, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (11B) :L1183-L1185

[4] Reduction of stress at the initial stages of GaN growth on Si(111) [J].

Dadgar, A ;

Poschenrieder, M ;

Reiher, A ;

Bläsing, J ;

Christen, J ;

Krtschil, A ;

Finger, T ;

Hempel, T ;

Diez, A ;

Krost, A .

APPLIED PHYSICS LETTERS, 2003, 82 (01) :28-30

[5]

Heying B, 1996, APPL PHYS LETT, V68, P643, DOI 10.1063/1.116495

[6] Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy [J].

Honda, Y ;

Kuroiwa, Y ;

Yamaguchi, M ;

Sawaki, N .

APPLIED PHYSICS LETTERS, 2002, 80 (02) :222-224

[7] Thermal stability of GaN on (111) Si substrate [J].

Ishikawa, H ;

Yamamoto, K ;

Egawa, T ;

Soga, T ;

Jimbo, T ;

Umeno, M .

JOURNAL OF CRYSTAL GROWTH, 1998, 189 :178-182

[8] GaN on Si substrate with AlGaN/AlN intermediate layer [J].

Ishikawa, H ;

Zhao, GY ;

Nakada, N ;

Egawa, T ;

Jimbo, T ;

Umeno, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (5A) :L492-L494

[9]

Ishikawa H, 1999, PHYS STATUS SOLIDI A, V176, P599, DOI 10.1002/(SICI)1521-396X(199911)176:1<599::AID-PSSA599>3.0.CO

[10]

2-F

← 1 2 3 →