Epitaxial growth of dielectric Ba0.6Sr0.4TiO3 thin film on MgO for room temperature microwave phase shifters

被引：153

作者：

Chen, CL ^{[1
]}

Shen, J

Chen, SY

Luo, GP

Chu, CW

Miranda, FA

Van Keuls, FW

Jiang, JC

Meletis, EI

Chang, HY

机构：

[1] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA

[2] Glenn Res Ctr, Commun Technol Div, Cleveland, OH 44135 USA

[3] Louisiana State Univ, Dept Mech Engn, Baton Rouge, LA 70803 USA

[4] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 05期

关键词：

D O I：

10.1063/1.1343499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dielectric Ba0.6Sr0.4TiO3 thin films were epitaxially grown on (001) MgO by using pulsed laser ablation. Microstructure studies from x-ray diffraction and electron microscopy suggest that the as-grown films are c-axis oriented with an interface relationship of < 100 > BSTO//< 100 > MgO. A room temperature coupled microwave phase shifter has been developed with a phase shift near 250 degrees at 23.675 GHz under an electrical field of 40 V/mum and a figure of merit of similar to 53 degrees /dB. The performance of the microwave phase shifter based on the epitaxial Ba0.6Sr0.4TiO3 thin films on (001) MgO is close to that needed for practical applications in wireless communications. (C) 2001 American Institute of Physics.

引用

页码：652 / 654

页数：3

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