High performance photoresponsive field-effect transistors based on MoS2/pentacene heterojunction

被引：15

作者：

Ren, Qiang ^{[1
]}

Xu, Qingsheng ^{[2
]}

Xia, Hongquan ^{[1
]}

Luo, Xiao ^{[1
]}

Zhao, Feiyu ^{[1
]}

Sun, Lei ^{[1
]}

Li, Yao ^{[1
]}

Lv, Wenli ^{[3
]}

Du, Lili ^{[1
]}

Peng, Yingquan ^{[1
,3
]}

Zhao, Zhong ^{[2
]}

机构：

[1] Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, South Tianshui Rd 222, Lanzhou 730000, Gansu, Peoples R China

[2] Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, South Tianshui Rd 222, Lanzhou 730000, Gansu, Peoples R China

[3] China Jiliang Univ, Coll Opt & Elect Technol, Xueyuan St 258, Hangzhou 310018, Zhejiang, Peoples R China

来源：

ORGANIC ELECTRONICS | 2017年 / 51卷

基金：

中国国家自然科学基金;

关键词：

Photoresponsive field-effect transistors; MoS2; Pentacene; CVD; VAPOR-DEPOSITION; MONOLAYER MOS2; LAYER MOS2; PENTACENE; SEMICONDUCTORS; PRESSURE; HYBRID;

D O I：

10.1016/j.orgel.2017.07.022

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Monolayer molybdenum disulfide (MoS2), with a high predicted intrinsic mobility of similar to 410 cm(2)/V at room temperature, shows great potential for application in sensors and optoelectronics as a result of good electrical performance and photoemission. Compared with the photoresponsive photodiodes, photoresponsive field-effect transistors exhibit higher sensitivity and lower noise. And, pentacene is a small molecule organic semiconductor and has high absorption in the visible region. Here, we reported on a high-performance photoresponsive field-effect transistor based on MoS2/pentacene inorganic/organic planar heterojunction. The results showed that the device demonstrated superior performance. Under 655 nm light illumination, the device exhibited an ultrahigh photoresponsivity of 103 A/W, a maximum photosensitivity of 1.8 x 10(3) and a high external quantum efficiency of around 195%, respectively. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：142 / 148

页数：7

共 47 条

[1] Nanosize semiconductors for photooxidation [J].