Fabrication of black multicrystalline silicon surface by nanosecond laser ablation

被引:25
作者
Zuev, D. A. [1 ]
Novodvorsky, O. A. [1 ]
Khaydukov, E. V. [1 ]
Khramova, O. D. [1 ]
Lotin, A. A. [1 ]
Parshina, L. S. [1 ]
Rocheva, V. V. [1 ]
Panchenko, V. Y. [1 ]
Dvorkin, V. V. [2 ]
Poroykov, A. Y. [2 ]
Untila, G. G. [2 ]
Chebotareva, A. B. [2 ]
Kost, T. N. [2 ]
Timofeyev, M. A. [2 ]
机构
[1] Russian Acad Sci ILIT RAS, Inst Laser & Informat Technol, Shatura 140700, Moscow Region, Russia
[2] Moscow MV Lomonosov State Univ, Skobeltsyn Inst Nucl Phys MSU SINP, Moscow 119991, Russia
来源
APPLIED PHYSICS B-LASERS AND OPTICS | 2011年 / 105卷 / 03期
基金
俄罗斯基础研究基金会;
关键词
FEMTOSECOND LASER; TEXTURIZATION; MICROSTRUCTURES; NANOSTRUCTURE; EVAPORATION;
D O I
10.1007/s00340-011-4625-x
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The optimal regimes for uniform texturing of a multicrystalline silicon (mc-Si) surface by pulsed laser radiation have been determined. The morphology and reflectance spectra of the texturized mc-Si have been studied. The laser-texturized mc-Si samples with reflectance of 2-3% over a wide spectral region have been produced. The influence of subsequent chemical etching on the reflective properties of the texturized surface has been analyzed.
引用
收藏
页码:545 / 550
页数:6
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