Sub-micron InGaN ring structures for high-efficiency LEDs

被引：0

作者：

Choi, HW ^{[1
]}

Edwards, PR ^{[1
]}

Liu, C ^{[1
]}

Jeon, CW ^{[1
]}

Martin, RW ^{[1
]}

Watson, IM ^{[1
]}

Dawson, MD ^{[1
]}

Tripathy, S ^{[1
]}

Chua, SJ ^{[1
]}

机构：

[1] Univ Strathclyde, Inst Photon, Glasgow G4 0NW, Lanark, Scotland

来源：

E-MRS 2003 FALL MEETING, SYMPOSIA A AND C, PROCEEDINGS | 2004年 / 1卷 / 02期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel technique based on the Fresnel diffraction effect for the fabrication of sub-micron ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an external diameter of 1.5 mum and a wall width of 500 nm. A1 cm(-1) Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 5 nm blue shift observed in the cathodoluminescence spectra can be attributed to band-filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim.

引用

页码：202 / 205

页数：4

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