Simulation of displacement damage for silicon avalanche photo-diodes

被引：0
|
作者：
Kilic, Adnan [1 ]
Pilicer, Ercan [1 ]
Tapan, Ilhan [1 ]
Ozmutlu, Emin N. [1 ]
机构：
[1] Uludag Univ, Dept Phys, TR-16059 Bursa, Turkey
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2011年 / 658卷 / 01期
关键词：
Radiation damage; Avalanche photo-diode; Geant4; simulation; PHOTODIODES; DETECTORS; NIEL;
D O I：
10.1016/j.nima.2011.05.073
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The silicon avalanche photo-diodes (APDs) in the CMS barrel electromagnetic calorimeter will be exposed to an integrated neutron fluence of about 2 x 10(13) n/cm(2) over 10 years of operation. High neutron fluences change the electrical properties of silicon detectors. The changes are proportional to the non-ionising energy loss in the APDs. Using the Geant4 toolkit, we have calculated the non-ionising energy loss as well as the rate of generation of primary defects in the APDs, for the expected neutron fluence. (C) 2011 Elsevier B.V. All rights reserved.
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收藏
页码：70 / 72
页数：3
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