Transport properties of InN nanowires

被引：64

作者：

Chang, CY ^{[1
]}

Chi, GC

Wang, WM

Chen, LC

Chen, KH

Ren, F

Pearton, SJ

机构：

[1] Natl Cent Univ, Dept Phys, Jhongli 320, Taiwan

[2] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan

[3] Acad Sinica, Inst Atom & Mol Sci, Taipei 106, Taiwan

[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2037850

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The transport properties of single InN nanowires grown by thermal catalytic chemical vapor deposition were measured as a function of both length/square of radius ratio and temperature. The resistivity of the n-type InN nanowires with diameter > 100 nm was measured by the transmission line method and the value was on the order of 4x10(-4) Omega cm. The specific contact resistivity for unalloyed Pd/Ti/Pt/Au ohmic contacts was near 1.09x10(-7) Omega cm(2). The temperature dependence of resistance showed a positive temperature coefficient and a functional form characteristic of metallic conduction in the InN. (c) 2005 American Institute of Physics.

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页数：3

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