Characterization of β-silicon carbide powders synthesized by the carbothermal reduction of silicon carbide precursors

Boron-doped and nondoped ultrafine beta-silicon carbide (beta-SiC) powders were synthesized via the carbothermal reduction of SiC precursors at temperatures of 1773-1973 K, Although the reaction rate of carbothermal reduction was generally higher when a boron-doped precursor was used, the reaction rate for the boron-doped precursor was reduced considerably at 1873 K, For boron-doped and nondoped precursors, the reaction rates were almost the same. Powder characterization via transmission electron microscopy indicated that the suppression of the reaction rate for boron-doped precursor at 1873 K was due to the formation of a special coexistent system with two types of particle agglomerates. As expected, boron doping inhibited the particle growth in the synthesis of SiC powder.