Dielectric characteristic of fatigued Bi4-xLaxTi3O12 ferroelectric films

被引:0
|
作者
Zhong, Ni [1 ]
Shoisaki, Tadashi [1 ]
机构
[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan
关键词
D O I
10.1109/ISAF.2007.4393192
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Dielectric measurement was carried out on fatigued Bi(4-x)La(x)Ti(3)O(12) ferroelectric films. It is found that the dielectric permittivity varies with switching cycles. With the increase of the switching cycles, the dielectric permittivity exhibits a continuous decrease. This decrease is pronounced for BiT films with low concentration of La, while it is slight for Bi(4-x)La(x)Ti(3)O(12) films with high concentration of La. Dielectric permittivity was also measured on Bi(3.2)La(0.8)Ti(3)O(12) ferroelectric films fatigue at different frequencies 50 kHz and 20 kHz. It exhibits that the decrease of dielectric permittivity is pronounced if the films were fatigued at low frequency, while this decrease is slight if the films were fatigue at high frequency. It is proposed that a growing of an interface layer appears during the fatigue process.
引用
收藏
页码:134 / 135
页数:2
相关论文
共 50 条
  • [31] Splitting of triggered phase transition in Bi4-xLaxTi3O12 mixed crystals
    Iwata, Makoto
    Zhao, Cheng-Hua
    Aoyagi, Rintaro
    Maeda, Masaki
    Ishibashi, Yoshihiro
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (9A): : 5894 - 5900
  • [32] Surface kinetics of Bi4-xLaxTi3O12 films etched in a CF4/Ar gas chemistry
    Kim, DP
    Kim, KT
    Efremov, AM
    Kim, CI
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 44 (01) : 1 - 5
  • [33] Effect of La doping on structural and electrical properties of ferroelectric Bi4-xLaxTi3O12 thin films prepared by chemical solution deposition
    Kim, HI
    Song, YS
    Sok, J
    Chung, CW
    THIN SOLID FILMS, 2003, 429 (1-2) : 114 - 118
  • [34] Surface etching mechanism of Bi4-xLaxTi3O12 thin films using quadrupole mass spectroscopy
    Kim, Jong-Gyu
    Kim, Gwan-Ha
    Kim, Chang-Il
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (04): : 1395 - 1398
  • [35] Effect of La3+ content on the properties of ferroelectric Bi4-xLaxTi3O12 (BLT) thin films prepared by aqueous chemical solution deposition
    Hardy, A.
    Van Bael, M. K.
    Van den Rul, H.
    Vangenechten, D.
    Mullens, J.
    D'Haen, J.
    Goux, L.
    Wouters, D. J.
    JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2007, 42 (03) : 239 - 245
  • [36] Degradation mechanism of ferroelectric properties in Pt/Bi4-xLaxTi3O12/Pt capacitors during forming gas annealing
    Chon, U
    Kim, KB
    Jang, HM
    APPLIED PHYSICS LETTERS, 2001, 79 (15) : 2450 - 2452
  • [37] Relationship between low frequency dielectric dispersion and ferroelectric phase transition in pulsed-laser-deposited Bi4-xLaxTi3O12 thin film
    J.H. Park
    J.S. Bae
    B.C. Choi
    J.H. Jeong
    H.J. Seo
    B.K. Moon
    I.W. Kim
    Applied Physics A, 2004, 79 : 1879 - 1882
  • [38] Complex impedance spectroscopy and dielectric relaxation studies of lead-free layered perovskite Bi4-xLaxTi3O12 ceramics: a ferroelectric to relaxor crossover
    Selvamani, Rachna
    Pandey, Adityanarayan H.
    Gupta, S. M.
    Karnal, A. K.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2022, 33 (08) : 5396 - 5410
  • [39] Relationship between low frequency dielectric dispersion and ferroelectric phase transition in pulsed-laser-deposited Bi4-xLaxTi3O12 thin film
    Park, JH
    Bae, JS
    Choi, BC
    Jeong, JH
    Seo, HJ
    Moon, BK
    Kim, IW
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 79 (08): : 1879 - 1882
  • [40] Deposition of Bi4-xLaxTi3O12 films by direct liquid injection-metalorganic chemical vapor deposition
    Kang, SW
    Rhee, SW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (01): : 340 - 343