Dielectric characteristic of fatigued Bi4-xLaxTi3O12 ferroelectric films

被引:0
|
作者
Zhong, Ni [1 ]
Shoisaki, Tadashi [1 ]
机构
[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan
关键词
D O I
10.1109/ISAF.2007.4393192
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Dielectric measurement was carried out on fatigued Bi(4-x)La(x)Ti(3)O(12) ferroelectric films. It is found that the dielectric permittivity varies with switching cycles. With the increase of the switching cycles, the dielectric permittivity exhibits a continuous decrease. This decrease is pronounced for BiT films with low concentration of La, while it is slight for Bi(4-x)La(x)Ti(3)O(12) films with high concentration of La. Dielectric permittivity was also measured on Bi(3.2)La(0.8)Ti(3)O(12) ferroelectric films fatigue at different frequencies 50 kHz and 20 kHz. It exhibits that the decrease of dielectric permittivity is pronounced if the films were fatigued at low frequency, while this decrease is slight if the films were fatigue at high frequency. It is proposed that a growing of an interface layer appears during the fatigue process.
引用
收藏
页码:134 / 135
页数:2
相关论文
共 50 条
  • [21] Preparation and properties of Bi4-xLaxTi3O12 thin films by chemical solution deposition
    Wu, D
    Li, AD
    Zhu, T
    Liu, ZG
    Ming, NB
    FERROELECTRICS, 2001, 260 (1-4) : 371 - 376
  • [22] Preparation and spectral analysis of Bi4-xLaxTi3O12 ferroelectric thin films by metal-organic deposition method
    Yuan Xin-hua
    Liu Li-ming
    Ying Wei-bin
    SPECTROSCOPY AND SPECTRAL ANALYSIS, 2007, 27 (07) : 1355 - 1358
  • [23] Ferroelectric Bi4Ti3O12 and Bi4-xLaxTi3O12 ceramics prepared by a new sol-gel route
    Babooram, K.
    Chin, D. K.
    Ye, Z. -G.
    JOURNAL OF ELECTROCERAMICS, 2008, 21 (1-4) : 43 - 48
  • [24] Cation distribution and structural instability in Bi4-xLaxTi3O12
    Osada, Minoru
    Tada, Masaru
    Kakihana, Masato
    Watanabe, Takayuki
    Funakubo, Hiroshi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (9 B): : 5572 - 5575
  • [25] Cation distribution and structural instability in Bi4-xLaxTi3O12
    Osada, M
    Tada, M
    Kakihana, M
    Watanabe, T
    Funakubo, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (9B): : 5572 - 5575
  • [26] Preparation and spectral analysis of Bi4-xLaxTi3O12 ferroelectric thin films by metal-organic deposition method
    Yuan, Xin-Hua
    Liu, Li-Ming
    Ying, Wei-Bin
    Guang Pu Xue Yu Guang Pu Fen Xi/Spectroscopy and Spectral Analysis, 2007, 27 (07): : 1355 - 1358
  • [27] Chemical vapor deposition of Ru bottom electrode for ferroelectric Bi4-xLaxTi3O12 capacitors
    Furukawa, T
    Kuroiwa, T
    Fujisaki, Y
    Sato, T
    Ishiwara, H
    INTEGRATED FERROELECTRICS, 2003, 59 (59) : 1437 - 1443
  • [28] Ferroelectric fatigue endurance of Bi4-xLaxTi3O12 thin films explained in terms of x-ray photoelectron spectroscopy
    Simoes, A. Z.
    Riccardi, C. S.
    Cavalcante, L. S.
    Longo, E.
    Varela, J. A.
    Mizaikoff, B.
    Hess, D. W.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (08)
  • [29] Ferroelectric properties of Bi4-xLaxTi3O12 (x=0, 0.75) thin films prepared by sol-gel method
    Guo Dong-Yun
    Li Mei-Ya
    Jun, Liu
    Linjie, Fu
    Jing, Wang
    Yu Ben-Fang
    Bin, Yang
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2007, 142 (2-3): : 135 - 138
  • [30] Effects of Bi2O3 seeding layer on crystallinity and electrical properties of CSD-derived Bi4-xLaxTi3O12 ferroelectric thin films
    Hayashi, T
    Togawa, D
    Sakamoto, W
    Hirano, S
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2004, 24 (06) : 1621 - 1624