Grown-in microdefects in silicon as a guide to the properties of point defects

被引：0
作者：
Voronkov, VV [1 ]
Falster, R [1 ]
机构：
[1] MEMC Elect Mat, I-39012 Merano, BZ, Italy
来源：
HIGH PURITY SILICON VII, PROCEEDINGS | 2002年 / 2002卷 / 20期
关键词：
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The concentration field of self-interstitials and vacancies in silicon depends on at least 10 parameters. But for the specific case of the growth of crystals deep in the interstitial mode, it is primarily sensitive to only the 3 parameters of the self-interstitial transport: the melting point diffusivity D-im, the migration energy E-id and the drift energy epsilon(i). A fit for these parameters can be obtained via the shape of A-swirl regions in quenched crystals. Using this approach, the resulting value for D-im is found to be about 1.5x10(-4) cm(2)/s (which considerably lower than a commonly assumed value) while ei is about 4 to 8 eV (a surprisingly strong uphill drift). This conclusion is still tentative and subject to some uncertainty related to a possible effect of carbon.
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页码：16 / 26
页数：11
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