Size effect in thermoelectric power factor of nondegenerate and degenerate low-dimensional semiconductors

被引:10
作者
Hung, Nguyen T. [1 ]
Nugraha, Ahmad R. T. [1 ]
Saito, Riichiro [1 ]
机构
[1] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan
关键词
Thermoelectric power factor; low-dimensional semiconductors; confinement length effect; thermal de Broglie wavelength; FIGURE;
D O I
10.1016/j.matpr.2017.10.005
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Low-dimensional materials have been known to give high thermoelectric (TE) performance by reducing the confinement length of the materials. Recently, we have shown that the TE power factor of low-dimensional semiconductors depends not only on the confinement length, but also on the thermal de Broglie wavelength of electrons or holes [Phys. Rev. Lett. 117, 036602 (2016)], in which the calculation was performed by assuming the semiconductors to be nondegenerate, i.e., we approximated the Fermi energy to lie only within the energy band gap, or in other words, the low doping approximation. Now, in this work, we generalize the previous results considering the degenerate case, in which the Fermi energy can exist in the valence or conduction bands, thus enabling a full consideration of heavy doping. An analytical formula for the TE power factor is derived to describe the size effect in the power factor of the low-dimensional semiconductors. We find that for both nondegenerate and degenerate cases, the TE power factor is enhanced in one-and two-dimensional semiconductors when the confinement length is smaller than the thermal de Broglie wavelength of the semiconductors, with Fermi energy around top (bottom) of valence (conduction) band for the p-type (n-type) semiconductors. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码:12368 / 12373
页数:6
相关论文
共 10 条
[1]   When thermoelectrics reached the nanoscale [J].
Heremans, Joseph P. ;
Dresselhaus, Mildred S. ;
Bell, Lon E. ;
Morelli, Donald T. .
NATURE NANOTECHNOLOGY, 2013, 8 (07) :471-473
[2]   EFFECT OF QUANTUM-WELL STRUCTURES ON THE THERMOELECTRIC FIGURE OF MERIT [J].
HICKS, LD ;
DRESSELHAUS, MS .
PHYSICAL REVIEW B, 1993, 47 (19) :12727-12731
[3]   Enhanced thermoelectric performance of rough silicon nanowires [J].
Hochbaum, Allon I. ;
Chen, Renkun ;
Delgado, Raul Diaz ;
Liang, Wenjie ;
Garnett, Erik C. ;
Najarian, Mark ;
Majumdar, Arun ;
Yang, Peidong .
NATURE, 2008, 451 (7175) :163-U5
[4]   Quantum Effects in the Thermoelectric Power Factor of Low-Dimensional Semiconductors [J].
Hung, Nguyen T. ;
Hasdeo, Eddwi H. ;
Nugraha, Ahmad R. T. ;
Dresselhaus, Mildred S. ;
Saito, Riichiro .
PHYSICAL REVIEW LETTERS, 2016, 117 (03)
[5]   Diameter dependence of thermoelectric power of semiconducting carbon nanotubes [J].
Hung, Nguyen T. ;
Nugraha, Ahmad R. T. ;
Hasdeo, Eddwi H. ;
Dresselhaus, Mildred S. ;
Saito, Riichiro .
PHYSICAL REVIEW B, 2015, 92 (16)
[6]   Importance of high power factor in thermoelectric materials for power generation application: A perspective [J].
Liu, Weishu ;
Kim, Hee Seok ;
Jie, Qing ;
Ren, Zhifeng .
SCRIPTA MATERIALIA, 2016, 111 :3-9
[7]  
Lundstrom M., 2009, FUNDAMENTALS CARRIER
[8]  
Sun X., 1999, Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407), P652, DOI 10.1109/ICT.1999.843472
[9]   TRANSPORT-PROPERTIES OF SILICON [J].
WEBER, L ;
GMELIN, E .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (02) :136-140
[10]   Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals [J].
Zhao, Li-Dong ;
Lo, Shih-Han ;
Zhang, Yongsheng ;
Sun, Hui ;
Tan, Gangjian ;
Uher, Ctirad ;
Wolverton, C. ;
Dravid, Vinayak P. ;
Kanatzidis, Mercouri G. .
NATURE, 2014, 508 (7496) :373-+