Structural characterization of Eu-doped GaN by transmission electron microscopy

被引：0

作者：

Seo, Jongwon ^{[1
]}

Chen, Shaoqiang ^{[1
]}

Sawahata, Junji ^{[1
]}

Mitome, Masaharu ^{[2
]}

Akimoto, Katsuhiro ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Natl Inst Mat Sci, Nanoscale Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

来源：

JOURNAL OF CERAMIC PROCESSING RESEARCH | 2008年 / 9卷 / 01期

关键词：

GaN; TEM; HRTEM; XRD; EDS; rare earth (Eu);

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The structural properties of Eu-doped GaN films grown on sapphire (0001) substrates by molecular beam epitaxy were studied using cross sectional transmission electron microscopy (TEM). The Eu concentration was estimated to be about 2at.% by Rutherford backscattering spectrometry and energy dispersive X-ray spectroscopy. Selected area diffraction patterns of the film showed a hexagonal structure, and no other anomalous patterns such as from Eu and EuN were observed. The high resolution TEM observation of the films showed a high density of stacking faults which was hardly observed in undoped GaN, bending layers and a small portion of cubic phase. The causes of the formation of stacking faults and bending of layers are discussed.

引用

页码：68 / 70

页数：3

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