Modulation of VO2 Metal-Insulator Transition by Ferroelectric HfO2 Gate Insulator

被引：16

作者：

Yajima, Takeaki ^{[1
,2
]}

Nishimura, Tomonori ^{[1
]}

Tanaka, Takahisa ^{[1
]}

Uchida, Ken ^{[1
]}

Toriumi, Akira ^{[1
]}

机构：

[1] Univ Tokyo, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan

[2] Japan Sci & Technol Agcy, PREST, Kawaguchi, Saitama 3320012, Japan

来源：

ADVANCED ELECTRONIC MATERIALS | 2020年 / 6卷 / 05期

关键词：

ferroelectric gating; ferroelectric HfO; (2); metal-insulator transition; Mott transistor; VO; IONIC LIQUID;

D O I：

10.1002/aelm.201901356

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ferroelectric gating of functional materials has often suffered because ferroelectric materials are poor insulators. In this study, the recently reported ferroelectric HfO2, a large band-gap oxide with excellent insulating properties, is exploited for electrostatically gating the archetypical metal-insulator transition material, VO2. By protecting the meta-stable ferroelectric phase from deterioration, the ferroelectric gating is successfully demonstrated with an ultra-thin VO2 channel in the back-gate geometry. The observed modulation of the VO2 channel conductivity is originated from the ferroelectric polarization reversal in the HfO2 gate insulator combined with the VO2 metal-insulator transition. These results demonstrate the significant potential of ferroelectric HfO2 for electrostatically controlling the state of matter for both fundamental research and device application.

引用

页数：5