Use of self-assembled monolayers for selective metal removal and ultrathin gate dielectrics in MoS2 field-effect transistors

被引：3

作者：

Du, Wanjing ^{[1
]}

Kawanago, Takamasa ^{[1
]}

Oda, Shunri ^{[1
]}

机构：

[1] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Inst Innovat Res, Meguro Ku, Tokyo 1520033, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 04期

关键词：

D O I：

10.7567/JJAP.56.04CP10

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a simple and rapid method for the fabrication of multilayer molybdenum disulfide (MoS2) field-effect transistors (FETs) by exploiting various functions of an octadecylphosphonic acid (ODPA)-based self-assembled monolayer (SAM). The SAM is used both for selective metal removal in patterning to simplify the fabrication process and as an ultrathin gate dielectrics in the device. The low voltage operation of the MoS2 FETs was observed with a low gate leakage current and small hysteresis. In addition, selective metal removal can effectively narrow the spacing between the gate and contact electrodes, resulting in improved device characteristics. This approach also makes it possible to transfer thinner and smaller MoS2 flakes. This study suggests intriguing applications of the SAM for the fabrication of functional electronic devices. (C) 2017 The Japan Society of Applied Physics

引用

收藏

页数：5

相关论文

共 31 条

[1]

Attari A., 2013, THESIS

[2] Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides [J].

Ayari, Anthony ;

Cobas, Enrique ;

Ogundadegbe, Ololade ;

Fuhrer, Michael S. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (01)

[3] Sub-15-nm patterning of asymmetric metal electrodes and devices by adhesion lithography [J].

Beesley, David J. ;

Semple, James ;

Jagadamma, Lethy Krishnan ;

Amassian, Aram ;

McLachlan, Martyn A. ;

Anthopoulos, Thomas D. ;

deMello, John C. .

NATURE COMMUNICATIONS, 2014, 5

[4] Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping [J].

Castellanos-Gomez, Andres ;

Buscema, Michele ;

Molenaar, Rianda ;

Singh, Vibhor ;

Janssen, Laurens ;

van der Zant, Herre S. J. ;

Steele, Gary A. .

2D MATERIALS, 2014, 1 (01)

[5] Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium [J].

Fang, Hui ;

Tosun, Mahmut ;

Seol, Gyungseon ;

Chang, Ting Chia ;

Takei, Kuniharu ;

Guo, Jing ;

Javey, Ali .

NANO LETTERS, 2013, 13 (05) :1991-1995

[6] Flexible active-matrix displays and shift registers based on solution-processed organic transistors [J].

Gelinck, GH ;

Huitema, HEA ;

Van Veenendaal, E ;

Cantatore, E ;

Schrijnemakers, L ;

Van der Putten, JBPH ;

Geuns, TCT ;

Beenhakkers, M ;

Giesbers, JB ;

Huisman, BH ;

Meijer, EJ ;

Benito, EM ;

Touwslager, FJ ;

Marsman, AW ;

Van Rens, BJE ;

De Leeuw, DM .

NATURE MATERIALS, 2004, 3 (02) :106-110

[7] Tracing the 4000 year history of organic thin films: From monolayers on liquids to multilayers on solids [J].

Greene, J. E. .

APPLIED PHYSICS REVIEWS, 2015, 2 (01)

[8] Using soft lithography to fabricate GaAs/AlGaAs heterostructure field effect transistors [J].

Hu, JM ;

Beck, RG ;

Deng, T ;

Westervelt, RM ;

Maranowski, KD ;

Gossard, AC ;

Whitesides, GM .

APPLIED PHYSICS LETTERS, 1997, 71 (14) :2020-2022

[9] Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum disulfide field-effect transistors [J].

Kawanago, Takamasa ;

Oda, Shunri .

APPLIED PHYSICS LETTERS, 2016, 108 (04)

[10] Ultralow-power organic complementary circuits [J].

Klauk, Hagen ;

Zschieschang, Ute ;

Pflaum, Jens ;

Halik, Marcus .

NATURE, 2007, 445 (7129) :745-748

← 1 2 3 4 →