Impact of size, shape, and composition on piezoelectric effects and electronic properties of In(Ga)As/GaAs quantum dots

被引:222
作者
Schliwa, Andrei [1 ]
Winkelnkemper, Momme [1 ]
Bimberg, Dieter [1 ]
机构
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
关键词
D O I
10.1103/PhysRevB.76.205324
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The strain fields in and around self-organized In(Ga)As/GaAs quantum dots (QDs) sensitively depend on QD geometry, average InGaAs composition, and the In/Ga distribution profile. Piezoelectric fields of varying sizes are one result of these strain fields. We study systematically a large variety of realistic QD geometries and composition profiles, and calculate the linear and quadratic parts of the piezoelectric field. The balance of the two orders depends strongly on the QD shape and composition. For pyramidal InAs QDs with sharp interfaces, a strong dominance of the second-order fields is found. Upon annealing, the first-order terms become dominant, resulting in a reordering of the electron p and d states and a reorientation of the hole wave functions.
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页数:17
相关论文
共 56 条
[1]  
Adachi S., 1992, PHYS PROPERTIES 3 V
[2]  
[Anonymous], BERLIN STUDIES SOLID
[3]  
[Anonymous], 1993, PROPERTIES LATTICE M
[4]  
[Anonymous], 1946, PIEZOELECTRICITY
[5]   8-BANK K.P MODEL OF STRAINED ZINCBLENDE CRYSTALS [J].
BAHDER, TB .
PHYSICAL REVIEW B, 1990, 41 (17) :11992-12001
[6]   Theoretical analysis of electron-hole alignment in InAs-GaAs quantum dots [J].
Barker, JA ;
O'Reilly, EP .
PHYSICAL REVIEW B, 2000, 61 (20) :13840-13851
[7]   Cylindrically shaped zinc-blende semiconductor quantum dots do not have cylindrical symmetry: Atomistic symmetry, atomic relaxation, and piezoelectric effects [J].
Bester, G ;
Zunger, A .
PHYSICAL REVIEW B, 2005, 71 (04)
[8]   Effects of linear and nonlinear piezoelectricity on the electronic properties of InAs/GaAs quantum dots [J].
Bester, Gabriel ;
Zunger, Alex ;
Wu, Xifan ;
Vanderbilt, David .
PHYSICAL REVIEW B, 2006, 74 (08)
[9]   Importance of second-order piezoelectric effects in zinc-blende semiconductors [J].
Bester, Gabriel ;
Wu, Xifan ;
Vanderbilt, David ;
Zunger, Alex .
PHYSICAL REVIEW LETTERS, 2006, 96 (18)
[10]   High speed nanophotonic devices based on quantum dots [J].
Bimberg, D. ;
Fiol, G. ;
Kuntz, M. ;
Meuer, C. ;
Laemmlin, M. ;
Ledentsov, N. N. .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (14) :3523-3532