Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates

被引：3
|
作者：
Alekseev, P. A. [1 ]
Dunaevskiy, M. S. [1 ]
Mikhailov, A. O. [1 ]
Lebedev, S. P. [2 ]
Lebedev, A. A. [1 ]
Ilkiv, I. V. [3 ]
Khrebtov, A. I. [2 ]
Bouravleuv, A. D. [1 ,3 ,4 ]
Cirlin, G. E. [2 ,3 ,4 ]
机构：
[1] Ioffe Inst, St Petersburg 194021, Russia
[2] ITMO Univ, St Petersburg 197101, Russia
[3] St Petersburg Acad Univ, St Petersburg 194021, Russia
[4] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 190103, Russia
来源：
SEMICONDUCTORS | 2018年 / 52卷 / 12期
基金：
俄罗斯基础研究基金会;
关键词：
MOLECULAR-BEAM EPITAXY; GAN NANOWIRES;
D O I：
10.1134/S1063782618120047
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The electrical properties of GaAs nanowires grown on a 6H-SiC (0001) substrate covered with graphene single layers and bilayers are studied. The nanowires are grown by molecular-beam epitaxy, with gold as a catalyst. The electrical properties are studied by measuring and analyzing the current-voltage characteristics of single nanowires vertically grown on a substrate. Numerical simulation of the experimental current-voltage curves revealed the presence of a 0.6-V-high Schottky barrier between the nanowires and graphene. The appearance of the barrier is due to the formation of excess arsenic at the nanowire/graphene interface.
引用
收藏
页码：1611 / 1615
页数：5
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