The influence of minor titanium addition on thermal properties of diamond/copper composites via in situ reactive sintering

被引：41

作者：

Che, Q. L. ^{[1
]}

Chen, X. K. ^{[1
]}

Ji, Y. Q. ^{[2
]}

Li, Y. W. ^{[1
]}

Wang, L. X. ^{[1
,2
]}

Cao, S. Z. ^{[1
]}

Jiang, Y. G. ^{[2
]}

Wang, Z. ^{[1
]}

机构：

[1] Lanzhou Inst Phys, State Key Lab Surface Technol, Lanzhou 730000, Peoples R China

[2] Tianjin Jinhang Inst Tech Phys, Tianjin Key Lab Opt Thin Film, Tianjin 300192, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2015年 / 30卷

关键词：

Thermal conductivity; Diamond composite; Spark plasma sintering; METAL-MATRIX COMPOSITES; CONDUCTIVITY MEASUREMENTS; MICROSTRUCTURE; RESISTANCE;

D O I：

10.1016/j.mssp.2014.09.050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A minor amount of titanium addition is proposed to improve interfacial bonding between diamond particles and copper matrix for diamond/copper composites. The volume fractions of diamond and minor titanium in the sintering process are optimized. The microstructures, thermal properties, interface reaction production, and the effects of minor amount of titanium on the properties of the composites are investigated. The results show that the interfacial bonding of the composites could be strengthened by changing the volume fraction of titanium and diamond. The 45 vol%-diamond/copper composites with 3 vol% titanium at 945 degrees C for 5 min exhibits thermal conductivity as high as 670 W/(m K), which is 90% of the theoretical prediction value. High thermal conductivity is achieved by forming the titanium carbide (TiC) and intermetallic compounds (Cu3Ti2) at the diamond/copper interface to obtain a good interface. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：104 / 111

页数：8

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