Analysis of tungsten and titanium migration during ESD contact burnout

被引：2

作者：

Walker, AJ ^{[1
]}

Le, KY ^{[1
]}

Shearer, J ^{[1
]}

Mahajani, M ^{[1
]}

机构：

[1] Matrix Semicond Inc, Santa Clara, CA 95054 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 07期

关键词：

electric-breakdown; electromigration; electrostatic discharges; second breakdown; titanium; tungsten;

D O I：

10.1109/TED.2003.814972

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A physical and chemical analysis of a machine model (MM) electrostatic discharge (ESD) failure in a silicon circuit was carried out. Focused ion beam (FIB) was used to make cross sections through the region of contact burnout. The resulting samples were analyzed using scanning electron microscopy (SEM) and two-dimensional (2-D) auger electron spectroscopic (AES) mapping. It is shown for the first time that both titanium (Ti) and tungsten (W) migrated throughout the melted silicon filament. Large pellets of the W plug were embedded in the bulk silicon but only on the cathode side of the junction. Mechanisms are discussed to explain these phenomena. These involve the melting of titanium disilicide (TiSi2), dissolution of Ti and W in the molten silicon and the formation of W pellets through electromigration at temperatures below similar to1800 K.

引用

页码：1617 / 1622

页数：6

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