Piezoelectric effects in InAs/GaAs(N11) self-assembled quantum dots

被引：5
作者：
Sanguinetti, S
Gurioli, M
Grilli, E
Guzzi, M
Henini, M
机构：
[1] Univ Milan, INFM, I-20125 Milan, Italy
[2] Univ Milan, Dip Sci Mat, I-20125 Milan, Italy
[3] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
来源：
THIN SOLID FILMS | 2000年 / 380卷 / 1-2期
基金：
英国工程与自然科学研究理事会;
关键词：
quantum dots; high index surfaces; piezoelectric effect; quantum confined Stark effect;
D O I：
10.1016/S0040-6090(00)01503-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of a piezoelectric field on the spectroscopic properties of strained InAs/GaAs self-assembled quantum dot (QD) heterostructures grown on (N11) substrates with A or B termination are presented. An increasing blue shift of photoluminescence (PL) band was observed with increasing excitation density. The PL blue shift of (N11) quantum dots measured at the highest elicitation grows with 1/N and shows an asymmetric dependence on whether the substrate has A or B termination. We attributed the blue shift of the photoluminescence band to the screening of the piezoelectric held by the photo-generated carriers, leading to a reduction of the piezoelectric induced quantum confined Stark effect. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：198 / 200
页数：3
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