Lateral epitaxial overgrowth of 3C-SiC on Si substrates by CVD method

被引：0

作者：

Sugishita, S ^{[1
]}

Shoji, A ^{[1
]}

Mukai, Y ^{[1
]}

Nishiguchi, T ^{[1
]}

Michikami, K ^{[1
]}

Issiki, T ^{[1
]}

Ohshima, S ^{[1
]}

Nishino, S ^{[1
]}

机构：

[1] Kyoto Inst Technol, Dept Elect & Informat Sci, Sakyo Ku, Kyoto 6068585, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷

关键词：

3C-SiC; CVD; epitaxial growth; hetero-epitaxial growth; lateral epitaxial overgrowth;

D O I：

10.4028/www.scientific.net/MSF.483-485.177

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Lateral epitaxial overgrowth (LEO) is known as method of defects reduction for GaN. LEO is expected to reduce crystal defects on hetero-epitaxial growth of 3C-SiC. (100) Si substrate patterned with SiO2 mask was used as the substrate. Before CVD process, V shape crater was made on Si surface by HCl etching. And growth condition of CVD was optimized. Single crystal of 3C-SiC was grown laterally on SiO2 layer. Cross-sectional transmission electron microscopic observation indicated that crystal quality of LEO region was single and no defect crystal.

引用

页码：177 / 180

页数：4