Radial growth dynamics of nanowires

被引:44
作者
Chen, XL
Lan, YC
Li, JY
Cao, YG
He, M
机构
[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
[3] Univ Sci & Technol Beijing, Dept Phys Chem, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
nanowire; growth dynamics;
D O I
10.1016/S0022-0248(00)00971-4
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In this brief paper, wt: address the problem of the radial growth dynamics of a nanowire due to the vapor-solid (VS) process while at the same time it grows along its axial direction due to vapor-liquid-solid (VLS) process. We show that there exists a critical radius at a certain saturation and that the nanowire will thicken if its initial radius is larger than the critical radius and vice versa. Only when its initial radius is equal to the critical radius will the radius of the nanowire be uniform along its axial direction. In all other cases, the nanowire is tapered with a certain slope. The slope is relevant to the initial radius. The closer it is to the critical radius, the smaller is the slope and vice versa. Although the slope may be generally very small, it still does exist. This suggests that it is difficult to grow long nanowires with a uniform radius. (C) 2001 Published by Elsevier Science B.V.
引用
收藏
页码:586 / 590
页数:5
相关论文
共 20 条
[1]   QUANTITATIVE STUDY ON GROWTH OF SILICON WHISKERS FROM SILANE AND GERMANIUM WHISKERS FROM GERMANE [J].
BOOTSMA, GA ;
GASSEN, HJ .
JOURNAL OF CRYSTAL GROWTH, 1971, 10 (03) :223-&
[2]   Large-scale synthesis of single crystalline gallium nitride nanowires [J].
Cheng, GS ;
Zhang, LD ;
Zhu, Y ;
Fei, GT ;
Li, L ;
Mo, CM ;
Mao, YQ .
APPLIED PHYSICS LETTERS, 1999, 75 (16) :2455-2457
[3]   Synthesis and optical properties of gallium arsenide nanowires [J].
Duan, XF ;
Wang, JF ;
Lieber, CM .
APPLIED PHYSICS LETTERS, 2000, 76 (09) :1116-1118
[4]   PERIODIC INSTABILITY IN WHISKER GROWTH [J].
GIVARGIZOV, EI .
JOURNAL OF CRYSTAL GROWTH, 1973, 20 (03) :217-226
[5]   Influence of the surface morphology on the yellow and "edge" emissions in wurtzite GaN [J].
Godlewski, M ;
Goldys, EM ;
Phillips, MR ;
Langer, R ;
Barski, A .
APPLIED PHYSICS LETTERS, 1998, 73 (25) :3686-3688
[6]   Synthesis of gallium nitride nanorods through a carbon nanotube-confined reaction [J].
Han, WQ ;
Fan, SS ;
Li, QQ ;
Hu, YD .
SCIENCE, 1997, 277 (5330) :1287-1289
[7]   Formation of GaN nano-column structure by nitridation [J].
Hashimoto, A ;
Motiduki, T ;
Wada, H ;
Yamamoto, A .
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :1129-1132
[8]   Formation of GaN nanorods by a sublimation method [J].
Li, JY ;
Chen, XL ;
Qiao, ZY ;
Cao, YG ;
Lan, YC .
JOURNAL OF CRYSTAL GROWTH, 2000, 213 (3-4) :408-410
[9]   Nanotechnology - Tweezers for the nanotool kit [J].
Mirkin, CA .
SCIENCE, 1999, 286 (5447) :2095-2096
[10]   A laser ablation method for the synthesis of crystalline semiconductor nanowires [J].
Morales, AM ;
Lieber, CM .
SCIENCE, 1998, 279 (5348) :208-211