The effects of temperature and hydrostatic pressure on the photoionization cross-section and binding energy of impurities in quantum-well wires

被引：22

作者：

Yesilgul, U. ^{[1
]}

Sakiroglu, S. ^{[2
]}

Kasapoglu, E. ^{[1
]}

Sari, H. ^{[1
]}

Soekmen, I. ^{[2
]}

机构：

[1] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey

[2] Dokuz Eylul Univ, Dept Phys, Izmir, Turkey

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2010年 / 48卷 / 01期

关键词：

Photoionization; Quantum-well wires; Impurity; SHALLOW DONOR IMPURITIES; STRONG MAGNETIC-FIELD; GAAS;

D O I：

10.1016/j.spmi.2010.04.003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Using a variational approach, we have calculated the donor impurity related photoionization cross-section and impurity binding in GaAs/GaAlAs quantum-well wires under different temperature and hydrostatic pressure conditions. Our calculation have revealed the dependence of the photoionization cross-section and the impurity binding on temperature and hydrostatic pressure. (c) 2010 Elsevier Ltd. All rights reserved.

引用

页码：106 / 113

页数：8

共 27 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].