ZnBr2 mediated transformation from nonluminescent Cs4PbBr6 to green-emitting Zn-doped CsPbBr3/Cs4PbBr6 nanocrystals for electroluminescent light-emitting diodes

被引:16
作者
Sun, Siqi [1 ,2 ]
Lu, Min [1 ,2 ]
Guo, Jie [1 ,2 ]
Zhang, Fujun [1 ,2 ]
Lu, Po [1 ,2 ]
Fu, Yuhao [3 ,4 ]
Bai, Xue [1 ,2 ]
Shi, Zhifeng [5 ]
Wu, Zhennan [1 ,2 ]
Yu, William W. [6 ]
Zhang, Yu [1 ,2 ]
机构
[1] Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
[2] Jilin Univ, Coll Elect Sci & Engn, Changchun 130012, Peoples R China
[3] Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
[4] Jilin Univ, Coll Phys, Changchun 130012, Peoples R China
[5] Zhengzhou Univ, Sch Phys & Microelect, Key Lab Mat Phys, Minist Educ, Daxue Rd 75, Zhengzhou 450052, Peoples R China
[6] Louisiana State Univ, Dept Chem & Phys, Shreveport, LA 71115 USA
基金
中国国家自然科学基金;
关键词
Zero-dimensional perovskite; Cs4PbBr6; nanocrystals; Phase transformation; Electroluminescent light-emitting diodes; HALIDE PEROVSKITES; I NANOCRYSTALS; BR; CL; CSPBX3;
D O I
10.1016/j.cej.2021.133556
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
Zero-dimensional (0D) perovskites have attracted a great deal of attention over the last few years due to their fascinating properties. However, their application in electroluminescent (EL) Light-emitting diodes (LEDs) is limited and suffering from extremely low device performance. Herein, the nonluminescent Cs4PbBr6 nanocrystals (NCs) were successfully transformed to highly luminescent Zn-doped CsPbBr3/Cs4PbBr6 NCs via an insertion reaction with ZnBr2, which changed the atomic molar ratios of NCs and promoted the formation of CsPbBr3. In this reaction, the Zn2+ ions provided by ZnBr2 together with the Pb2+ ions can occupy the B-site due to the similar ion radius. The extra Br- ions not only can facilitate the transformation process, but also can passivate the surface defects of the NCs, resulting in high photoluminescence quantum yield (PL QY) of 77.5%. Furthermore, as-synthesized Zn-doped CsPbBr3/Cs4PbBr6 NCs were used as emitters to fabricate EL LEDs. The device achieved the maximum current efficiency of 9.8 cd/A and a peak external quantum efficiency of 3.2%, which is the best performance of the CsPbBr3/Cs4PbBr6 based LEDs. This reveals the great application potential of CsPbBr3/Cs4PbBr6 NCs as EL emitters in LEDs.
引用
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页数:7
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