Effects of step bunching on CuPt-B ordered structures in Ga0.5In0.5P grown by MOVPE

被引：5

作者：

Gomyo, A ^{[1
]}

Miyasaka, F ^{[1
]}

Hotta, H ^{[1
]}

Fukagai, K ^{[1
]}

Kobayashi, K ^{[1
]}

机构：

[1] NEC, Optoelect & High Frequency Device Res Labs, Ibaraki, Osaka 3058501, Japan

来源：

APPLIED SURFACE SCIENCE | 1998年 / 130卷

关键词：

ordered structure; CuPt-type; GaInP; step bunching; MOVPE;

D O I：

10.1016/S0169-4332(98)00103-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effects of step bunching on a CuPt-B ordered structure in Ga(0.5)In(0.5)P grown on ((1) over bar 18)B and((1) over bar 1 13)B substrates by metalorganic vapor phase epitaxy (MOVPE) were studied. The growth was carried out at 660 degrees C with V/III ratios of 55 and 1500. In the GaInP layers, a CuPt-B ordered structure in the [(1) over bar 11]B direction was dominantly formed. The epitaxial growth surfaces were undulated caused by the atomic-step bunching. When GaInP was grown at a V/III ratio of 55, a disordered region of CuPt-B ordered structure was formed at the step-bunched surface. At a V/III ratio of 1500, anti-phase domain boundaries of a CuPt-B ordered structure were formed on terraced surfaces, resulting in stretched terrace surfaces. The ordered structure is expected to be caused by the epitaxial growth on the undulated surface which has a distribution of P-dimer coverage. From a transmission electron microscopy lattice image, CuPt-B ordered-structure formation at the lower V/III ratio was weaker. The difference in the ordered-structure formation between two V/III ratios indicates that P-dimer coverage of surface reconstructions is a factor that affects the ordering formation intensity. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：469 / 474

页数：6

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