Light engineering of the polariton landscape in semiconductor microcavities

被引：84

作者：

Amo, A. ^{[1
,2
]}

Pigeon, S. ^{[3
,4
]}

Adrados, C. ^{[1
,2
]}

Houdre, R. ^{[5
]}

Giacobino, E. ^{[1
,2
]}

Ciuti, C. ^{[3
,4
]}

Bramati, A. ^{[1
,2
]}

机构：

[1] Univ Paris 06, Lab Kastler Brossel, Ecole Normale Super, F-75005 Paris, France

[2] Univ Paris 06, CNRS, F-75005 Paris, France

[3] Univ Paris 07, Lab Mat & Phenomenes Quant, UMR 7162, F-75013 Paris, France

[4] CNRS, F-75013 Paris, France

[5] Ecole Polytech Fed Lausanne, Inst Phys Mat Condensee, Fac Sci Base, CH-1015 Lausanne, Switzerland

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 08期

关键词：

BOSE-EINSTEIN CONDENSATION; QUANTUM-WELLS; ATOMS; GAS; PARTICLES; LATTICES;

D O I：

10.1103/PhysRevB.82.081301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate a method to create potential barriers with polarized light beams for polaritons in semiconductor microcavities. The form of the barriers is engineered via the real space shape of a focalized beam on the sample. Their height can be determined by the visibility of the scattering waves generated in a polariton fluid interacting with them. This technique opens up the way to the creation of dynamical potentials and defects of any shape in semiconductor microcavities.

引用

页数：4

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